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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP8W/35HLS85
Repositorysid.inpe.br/mtc-m18@80/2009/06.26.19.53
Last Update2009:06.26.19.53.18 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m18@80/2009/06.26.19.53.19
Metadata Last Update2020:04.28.17.48.43 (UTC) administrator
Secondary KeyINPE--PRE/
DOI10.1063/1.3082043
ISSN0021-8979
Citation KeyMenguiAbRaDiClSeUe:2009:ElPrPb
TitleElectrical properties of PbTe doped with BaF2
Year2009
MonthFeb.
Access Date2024, May 18
Secondary TypePRE PI
Number of Files1
Size197 KiB
2. Context
Author1 Mengui, Úrsula Andréia
2 Abramof, Eduardo
3 Rappl, Paulo Henrique de Oliveira
4 Diaz, Beatriz
5 Closs, Humberto
6 Senna, José Roberto
7 Ueta, Antônio Yukio
Resume Identifier1
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JJ37
Group1 LAS-CTE-INPE-MCT-BR
2 LAS-CTE-INPE-MCT-BR
3 LAS-CTE-INPE-MCT-BR
4 LAS-CTE-INPE-MCT-BR
5 LAS-CTE-INPE-MCT-BR
6 LAS-CTE-INPE-MCT-BR
7 LAP-CTE-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
7 Instituto Nacional de Pesquisas Espaciais (INPE)
JournalJournal of Applied Physics
Volume105
Number4
Secondary MarkA_ASTRONOMIA_/_FÍSICA A_CIÊNCIAS_BIOLÓGICAS_I A_CIÊNCIAS_BIOLÓGICAS_III A_ECOLOGIA_E_MEIO_AMBIENTE A_EDUCAÇÃO_FÍSICA A_ENGENHARIAS_II A_ENGENHARIAS_III A_ENGENHARIAS_IV A_FARMÁCIA A_GEOCIÊNCIAS A_INTERDISCIPLINAR A_MEDICINA_II A_ODONTOLOGIA A_QUÍMICA B_MATEMÁTICA_/_PROBABILIDADE_E_ESTATÍSTICA
History (UTC)2009-06-26 19:53:59 :: simone -> administrator ::
2010-05-11 01:08:44 :: administrator -> simone ::
2011-05-20 23:40:07 :: simone -> administrator ::
2020-04-28 17:48:43 :: administrator -> simone :: 2009
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordsbarium compounds
carrier density
carrier mobility
Hall effect
IV-VI semiconductors
lead compounds
molecular beam epitaxial growth
semiconductor doping
semiconductor epitaxial layers
AbstractWe study here the p-type doping of PbTe with BaF2. For the investigation, PbTe layers were grown on (111) BaF2 substrates by molecular beam epitaxy. The beam flux ratio between BaF2 and PbTe, defined as the nominal doping level, was varied from 0.02% to 1%. The hole density increases from 5x10(17) to 1x10(19) cm(-3) as the doping level rises from 0.02% to 0.4% and saturates at p similar to 10(19) cm(-3) for higher levels. The saturation effect was attributed to self-compensation. The carrier concentration of all samples remained almost constant as the temperature was varied from 10 to 350 K, indicating that no thermal activation is present in the whole doping range. It suggests that the impurity level in PbTe doped with BaF2 remains resonant with the valence band, similar to the native defects behavior. The low-temperature mobility showed a pronounced reduction from 50 000 to 2 000 cm(2)/V s as the doping level rises from 0.02% to 1%, mainly due to the substantial increase in the hole concentration. For temperatures higher than 80 K, the mobility was essentially limited by phonon scattering. Our results demonstrate that a controlled p-type doping of PbTe with BaF2 can be obtained up to 10(19) cm(-3).
AreaFISMAT
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4. Conditions of access and use
data URLhttp://urlib.net/ibi/8JMKD3MGP8W/35HLS85
zipped data URLhttp://urlib.net/zip/8JMKD3MGP8W/35HLS85
Languageen
Target Fileelectrical properties.pdf
User Groupadministrator
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Visibilityshown
Archiving Policyallowpublisher allowfinaldraft
Read Permissionallow from all
5. Allied materials
Mirror Repositorysid.inpe.br/mtc-m18@80/2008/03.17.15.17.24
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.57.50 2
sid.inpe.br/bibdigital/2013/09.24.19.30 1
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 1
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/mtc-m18@80/2008/03.17.15.17
6. Notes
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