1. Identity statement | |
Reference Type | Journal Article |
Site | mtc-m16c.sid.inpe.br |
Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identifier | 8JMKD3MGP8W/35HLS85 |
Repository | sid.inpe.br/mtc-m18@80/2009/06.26.19.53 |
Last Update | 2009:06.26.19.53.18 (UTC) administrator |
Metadata Repository | sid.inpe.br/mtc-m18@80/2009/06.26.19.53.19 |
Metadata Last Update | 2020:04.28.17.48.43 (UTC) administrator |
Secondary Key | INPE--PRE/ |
DOI | 10.1063/1.3082043 |
ISSN | 0021-8979 |
Citation Key | MenguiAbRaDiClSeUe:2009:ElPrPb |
Title | Electrical properties of PbTe doped with BaF2 |
Year | 2009 |
Month | Feb. |
Access Date | 2024, May 18 |
Secondary Type | PRE PI |
Number of Files | 1 |
Size | 197 KiB |
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2. Context | |
Author | 1 Mengui, Úrsula Andréia 2 Abramof, Eduardo 3 Rappl, Paulo Henrique de Oliveira 4 Diaz, Beatriz 5 Closs, Humberto 6 Senna, José Roberto 7 Ueta, Antônio Yukio |
Resume Identifier | 1 2 8JMKD3MGP5W/3C9JGUH 3 8JMKD3MGP5W/3C9JJ37 |
Group | 1 LAS-CTE-INPE-MCT-BR 2 LAS-CTE-INPE-MCT-BR 3 LAS-CTE-INPE-MCT-BR 4 LAS-CTE-INPE-MCT-BR 5 LAS-CTE-INPE-MCT-BR 6 LAS-CTE-INPE-MCT-BR 7 LAP-CTE-INPE-MCT-BR |
Affiliation | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 Instituto Nacional de Pesquisas Espaciais (INPE) 3 Instituto Nacional de Pesquisas Espaciais (INPE) 4 Instituto Nacional de Pesquisas Espaciais (INPE) 5 Instituto Nacional de Pesquisas Espaciais (INPE) 6 Instituto Nacional de Pesquisas Espaciais (INPE) 7 Instituto Nacional de Pesquisas Espaciais (INPE) |
Journal | Journal of Applied Physics |
Volume | 105 |
Number | 4 |
Secondary Mark | A_ASTRONOMIA_/_FÍSICA A_CIÊNCIAS_BIOLÓGICAS_I A_CIÊNCIAS_BIOLÓGICAS_III A_ECOLOGIA_E_MEIO_AMBIENTE A_EDUCAÇÃO_FÍSICA A_ENGENHARIAS_II A_ENGENHARIAS_III A_ENGENHARIAS_IV A_FARMÁCIA A_GEOCIÊNCIAS A_INTERDISCIPLINAR A_MEDICINA_II A_ODONTOLOGIA A_QUÍMICA B_MATEMÁTICA_/_PROBABILIDADE_E_ESTATÍSTICA |
History (UTC) | 2009-06-26 19:53:59 :: simone -> administrator :: 2010-05-11 01:08:44 :: administrator -> simone :: 2011-05-20 23:40:07 :: simone -> administrator :: 2020-04-28 17:48:43 :: administrator -> simone :: 2009 |
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3. Content and structure | |
Is the master or a copy? | is the master |
Content Stage | completed |
Transferable | 1 |
Content Type | External Contribution |
Keywords | barium compounds carrier density carrier mobility Hall effect IV-VI semiconductors lead compounds molecular beam epitaxial growth semiconductor doping semiconductor epitaxial layers |
Abstract | We study here the p-type doping of PbTe with BaF2. For the investigation, PbTe layers were grown on (111) BaF2 substrates by molecular beam epitaxy. The beam flux ratio between BaF2 and PbTe, defined as the nominal doping level, was varied from 0.02% to 1%. The hole density increases from 5x10(17) to 1x10(19) cm(-3) as the doping level rises from 0.02% to 0.4% and saturates at p similar to 10(19) cm(-3) for higher levels. The saturation effect was attributed to self-compensation. The carrier concentration of all samples remained almost constant as the temperature was varied from 10 to 350 K, indicating that no thermal activation is present in the whole doping range. It suggests that the impurity level in PbTe doped with BaF2 remains resonant with the valence band, similar to the native defects behavior. The low-temperature mobility showed a pronounced reduction from 50 000 to 2 000 cm(2)/V s as the doping level rises from 0.02% to 1%, mainly due to the substantial increase in the hole concentration. For temperatures higher than 80 K, the mobility was essentially limited by phonon scattering. Our results demonstrate that a controlled p-type doping of PbTe with BaF2 can be obtained up to 10(19) cm(-3). |
Area | FISMAT |
Arrangement 1 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Electrical properties of... |
Arrangement 2 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Electrical properties of... |
doc Directory Content | access |
source Directory Content | there are no files |
agreement Directory Content | there are no files |
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4. Conditions of access and use | |
data URL | http://urlib.net/ibi/8JMKD3MGP8W/35HLS85 |
zipped data URL | http://urlib.net/zip/8JMKD3MGP8W/35HLS85 |
Language | en |
Target File | electrical properties.pdf |
User Group | administrator simone |
Visibility | shown |
Archiving Policy | allowpublisher allowfinaldraft |
Read Permission | allow from all |
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5. Allied materials | |
Mirror Repository | sid.inpe.br/mtc-m18@80/2008/03.17.15.17.24 |
Next Higher Units | 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS |
Citing Item List | sid.inpe.br/mtc-m21/2012/07.13.14.57.50 2 sid.inpe.br/bibdigital/2013/09.24.19.30 1 sid.inpe.br/mtc-m21/2012/07.13.14.44.57 1 |
Dissemination | WEBSCI; PORTALCAPES; COMPENDEX. |
Host Collection | sid.inpe.br/mtc-m18@80/2008/03.17.15.17 |
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6. Notes | |
Empty Fields | alternatejournal archivist callnumber copyholder copyright creatorhistory descriptionlevel documentstage e-mailaddress electronicmailaddress format isbn label lineage mark nextedition notes orcid pages parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
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7. Description control | |
e-Mail (login) | simone |
update | |
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